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SI5513DC Complementary MOSFET

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www.DataSheet.co.kr Si5513DC Vishay Siliconix Complementary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel 20

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Features

* AL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 P
* CHANNEL Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W t1 t2 Single

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