SI5513DC Datasheet - Vishay Siliconix

SI5513DC Complementary MOSFET

www.DataSheet.co.kr Si5513DC Vishay Siliconix Complementary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel 20 20 rDS(on) (W) 0.075 @ VGS = 4.5 V 0.134 @ VGS = 2.5 V 0.155 @ VGS = 4.5 V 0.260 @ VGS = 2.5 V ID (A) 4.2 3.1 2.9 2.2 Qg (Typ) 4 3 1206-8 ChipFETr 1 S1 D1 D1 D2 D2 G1 S2 G2 D1 S2 G2 G1 Marking Code EB XX Lot Traceability and Date Code S1 N-Channel MOSFET D2 P-Channel MOSFET Bottom View Part # Cod.

SI5513DC Features

* AL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 P

* CHANNEL Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W t1 t2 Single

SI5513DC Datasheet (144.71 KB)