SI7601DN

P-Channel 20-V (D-S) MOSFET

Vishay Siliconix

SI7601DN General Description

The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the

*55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bi.

SI7601DN Datasheet (259.88 KB)

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SI7601DN

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Vishay ↗ Siliconix

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259.88 KB

Description:

P-channel 20-v (d-s) mosfet.
www.DataSheet4U.com SPICE Device Model Si7601DN Vishay Siliconix P-Channel 20-V (D-S) MOSFET CHARACTERISTICS

* P-Channel Vertical DMOS

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SI7601DN P-Channel 20-V D-S MOSFET Vishay Siliconix

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SI7601DN General Description

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