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SI8401DB P-Channel MOSFET

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Description

www.vishay.com Si8401DB Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) () 0.065 at VGS = -4.5 V 0.095 at VGS =.

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Features

* TrenchFET® power MOSFET
* MICRO FOOT® chipscale packaging reduces footprint area profile (0.62 mm) and on-resistance per footprint area
* Pin compatible to industry standard Si3443DV
* Material categorization: for definitions of compliance please see www. vishay. com/

Applications

* S
* PA, battery, and load switch
* Battery charger switch
* PA switch G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) a Pulsed Drain C

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