SI8402DB
FEATURES
- Trench FET® Power MOSFET
- MICRO FOOT® Chipscale Packaging
Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area
- Material categorization: For definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- PA, Battery and Load Switch for
Portable Devices
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
±8
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current
TA = 25 °C TA = 70 °C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Package Reflow Conditionsb
IR/Convection
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) t5s Steady...
