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SIHF620 Power MOSFET

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Description

Power MOSFET IRF620, SiHF620 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 14.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Features

* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC Available RoHS

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF620PbF SiHF620-E3 IRF620 SiHF620 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBO

SIHF620 Distributors

📁 Related Datasheet

SiHF624S SiHF610L SiHF610S SiHF614 SiHF614S SiHF630S

📌 All Tags

SIHF620 Power MOSFET Vishay Siliconix
Vishay Siliconix SIHF620-like datasheet
SiHF620S
SIHF624
SIHF610
SiHF630
SiHF634