SIHP12N50C - Power MOSFET
SIHP12N50C Features
* 560 V VGS = 10 V 48 12 15 Single D
* Low Figure-of-Merit Ron x Qg 0.555
* 100 % Avalanche Tested
* Gate Charge Improved
* Trr/Qrr Improved
* Compliant to RoHS Directive 2002/95/EC G D S GD S D2PAK (TO-263) G S G D S N-Channel MOSFET ORDERING INFORMA
