TSFF5210
DESCRIPTION
TSFF5210 is an infrared, 870 nm emitting diode in Ga Al As double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
FEATURES
- Package type: leaded
- Package form: T-1 3/4
- Dimensions (in mm): Ø 5
- Leads with stand-off
- Peak wavelength: λp = 870 nm
- High reliability
- High radiant power
- High radiant intensity
- Angle of half intensity: ϕ = ± 10°
- Low forward voltage
- Suitable for high pulse current operation
- High modulation bandwidth: fc = 24 MHz
- Good spectral matching with Si photodetectors
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Infrared video data transmission between camcorder and TV set
- Free air data transmission systems with high modulation frequencies or high data transmission rate requirements
- Smoke-automatic fire detectors
PRODUCT SUMMARY
PONENT TSFF5210
Ie (m W/sr) 180
ϕ (°) ± 10
Note
- Test conditions see table “Basic...
