TSFF5210 - High Speed Infrared Emitting Diode

Vishay Siliconix

TSFF5210 Datasheet Preview — Preview of TSFF5210 PDF

Datasheet Details

Part number	TSFF5210
Manufacturer	Vishay ↗ Siliconix
File Size	118.16 KB
Description	High Speed Infrared Emitting Diode
Datasheet	TSFF5210_VishaySiliconix.pdf

TSFF5210 Product details

Description

TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Features

Package type: leaded.
Package form: T-1 3/4.
Dimensions (in mm): Ø 5.
Leads with stand-off.
Peak wavelength: λp = 870 nm.
High reliability.
High radiant power.
High radiant intensity.
Angle of half intensity: ϕ = ± 10°.
Low forward voltage.
Suitable for high pulse current operation.
High modulation bandwidth: fc = 24 MHz.
Good spectral matching with Si photodetectors.
Ma.

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Published: Jul 7, 2008 |