Description
TSUS5200 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package.
Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
Infrared remote control and free air transmission systems with low forward voltage and small package requirements
Emitter in transmissive sensors
Emitter in reflective sensors
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) ± 15 ± 15 ± 15 λP (nm) 950 950
Features
- Package type: leaded.
- Package form: T-1¾.
- Dimensions (in mm): Ø 5.
- Leads with stand-off.
- Peak wavelength: λp = 950 nm.
- High reliability.
- Angle of half intensity: ϕ = ± 15°
94 8390.
- Low forward voltage.
- Suitable for high pulse current operation.
- Good spectral matching with Si photodetectors.