S949T Datasheet, Mosmic, Vishay Telefunken

S949T Features

• Mosmic D D D D Integrated gate protection diodes Low noise figure High gain Biasing network on chip D Improved cross modulation at gain reduction D High AGC-range D SMD package 2 1 1 2 9

PDF File Details

Part number:

S949T

Manufacturer:

Vishay ↗ Telefunken

File Size:

194.89kb

Download:

📄 Datasheet

Description:

Mosmic.

S949T Application

• Applications Low noise gain controlled input stages in UHF-and VHF- tuner with 9 V supply voltage. AGC RF in C block C block G2 G1 S D RF out C bloc

TAGS

S949T

Vishay Telefunken

📁 Related Datasheet

S949TR - MOSMIC (Vishay Telefunken)
S949T/S949TR/S949TRW Vishay Telefunken MOSMIC® for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic.

S949TRW - MOSMIC (Vishay Telefunken)
S949T/S949TR/S949TRW Vishay Telefunken MOSMIC® for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic.

S9408 - Quad 8-Bit Nonvolatile DACPOT (Summit Microelectronics)
SUMMIT MICROELECTRONICS, Inc. S9408 Serial Input, Quad 8-Bit Nonvolatile DACPOT™ FEATURES • Four 8-Bit DACS – Differential Non-linearity - ±0.5LSB .

S9418 - Quad 8-Bit Nonvolatile DACPOT Electronic Potentiometer (ETC)
SUMMIT MICROELECTRONICS, Inc. S9418 Quad 8-Bit Nonvolatile DACPOT™ Electronic Potentiometer With a Mute Control Input FEATURES • Four 8-Bit DACS — D.

S942-X - Relay (Solid State Optronic)
S942-X Zero Cross 800V / 1.2A AC Solid State Relay Description The S942-X is a bi-directional, single-pole, single-throw, normally open multipurpose .

S9004P2CT - 30A SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
S9004P2CT 30A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power L.

S9005P2CT - 20A SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
S9005P2CT 20A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power L.

S9011 - NPN Transistor (WEJ)
RoHS S9011 S9011 F EATURE Pow er dissipation P CM: TRANSISTOR (NPN) TO-92 1 . EMITTER 2. BASE 0 .31 W (Tamb=25℃) 3. COLLECTOR Co llector curren.

S9011 - NPN Silicon Epitaxial Planar Transistor (BL)
BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES z Collec tor Current.(IC= 30mA） z Power dissipation.(PC=200mW) Production speci.

S9011 - NPN Transistor (GME)
NPN Silicon Epitaxial Planar Transistor FEATURES  Collector Current.(IC= 30mA）  Power dissipation.(PC=200mW) APPLICATIONS Pb Lead-free  AM conve.