G1A
333.46kb
Standard sinterglass diode.
📁 Related Datasheet
G1000LL250 - Anode-Shorted Gate Turn-Off Thyristor
(IXYS)
Date:- 18 Feb, 2004 Data Sheet Issue:- 1
Anode-Shorted Gate Turn-Off Thyristor Type G1000L#250
Absolute Maximum Ratings
VDRM VRSM VRRM VDC-link
VO.
G1000LM250 - Anode-Shorted Gate Turn-Off Thyristor
(IXYS)
Date:- 18 Feb, 2004 Data Sheet Issue:- 1
Anode-Shorted Gate Turn-Off Thyristor Type G1000L#250
Absolute Maximum Ratings
VDRM VRSM VRRM VDC-link
VO.
G1000NC450 - Anode Shorted Gate Turn-Off Thyristor
(IXYS)
WESTCODE
An IXYS Company
Date:- 28 Oct-04 Data Sheet Issue:- 1
Anode Shorted Gate Turn-Off Thyristor Type G1000NC450
Absolute Maximum Ratings
VDRM.
G1000NL450 - Anode Shorted Gate Turn-Off Thyristor
(IXYS)
WESTCODE
An IXYS Company
Date:- 16 Jun-04 Data Sheet Issue:- 1
Anode Shorted Gate Turn-Off Thyristor Type G1000NL450
Absolute Maximum Ratings
VDRM.
G1000QC250 - Anode Shorted Gate Turn-Off Thyristor
(IXYS)
WESTCODE
An IXYS Company
Date:- 2 Aug, 2011 Data Sheet Issue:- A1
Provisional Data
Anode Shorted Gate Turn-Off Thyristor Types G1000QC250
Absolute .
G1000QC400 - Anode Shorted Gate Turn-Off Thyristor
(IXYS)
WESTCODE
An IXYS Company
Date:- 31 Jan, 2008 Data Sheet Issue:- 1
Provisional Data
Anode Shorted Gate Turn-Off Thyristor Types G1000QC400 to G1000QC.
G1000QC450 - Anode Shorted Gate Turn-Off Thyristor
(IXYS)
WESTCODE
An IXYS Company
Date:- 31 Jan, 2008 Data Sheet Issue:- 1
Provisional Data
Anode Shorted Gate Turn-Off Thyristor Types G1000QC400 to G1000QC.
G1002 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G1002
N-Channel Enhancement Mode Power MOSFET
Description
The G1002 uses advanced trench technology to provide
excellent RDS(ON) , low gate charge. .
G1003A - N-Channel Enhancement Mode Power MOSFET
(GFD)
G1003A
N-Channel Enhancement Mode Power MOSFET
Description
The G1003A uses advanced trench technology to provide
excellent RDS(ON) , low gate charge.
G1003B - N-Channel MOSFET
(GOFORD)
GOFORD
G1003B
General Description
The G1003B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate v.
