GSD2004S-V
Features
- Silicon Epitaxial Planar Diode
- Fast switching dual in-series diode, especially suited for applications requiring high voltage capability
- AEC-Q101 qualified
- pliant to Ro HS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOT-23 Weight: approx. 8.8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
2 1
12 3
Parts Table
Part GSD2004S-V
Ordering code GSD2004S-V-GS18 or GSD2004S-V-GS08
Marking DB6
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Continuous reverse voltage
Peak repetitive reverse voltage
Forward current (continuous)
Peak repetitive forward current
Non-repetitive peak forward current tp = 1 μs tp = 1 s
Power dissipation
1) Device on Fiberglass Substrate, see layout on second page
Symbol...
