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IRFPE50 Power MOSFET

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Description

www.vishay.com IRFPE50 Vishay Siliconix Power MOSFET D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (max.) (nC) Q.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resista.

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Features

* Dynamic dV/dt rated
* Repetitive avalanche rated
* Isolated central mounting hole Available
* Fast switching
* Ease of paralleling
* Simple drive requirements
* Material categorization: for definitions of compliance please see www. vish

Applications

* where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. ORDERING INFORMAT

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Power MOSFET Vishay
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