* Trench MOS Schottky technology
* Lower power losses, high efficiency
* Low forward voltage drop
* High forward surge capability
* High frequency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
MBRB20100CT-E3 Datasheet (150.86 KB)
MBRB20100CT-E3
150.86 KB
Dual common-cathode high voltage trench mos barrier schottky rectifier.
MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3
www.vishay.com
Vishay General Semiconductor
Dual Common-Cathode High Voltage Trench MOS Barrier Schot.
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