MBRB20100CT-E3 - Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier
MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3 www.vishay.com Vishay General Semiconductor Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier TO-220AB TMBS® ITO-220AB MBR2090CT MBR20100CT PIN 1 PIN 2 PIN 3 CASE 3 2 1 MBRF2090CT MBRF20100CT PIN 1 PIN 2 PIN 3 TO-263AB K 123 2 1 MBRB2090CT MBRB20100CT PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max.
Package 2 x 10 A 90 V to 100 V 150 A 0.65 V 150 °C TO-220AB, ITO-220AB, TO-263
MBRB20100CT-E3 Features
* Trench MOS Schottky technology
* Lower power losses, high efficiency
* Low forward voltage drop
* High forward surge capability
* High frequency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
