MGDT100100 Datasheet - Vishay

MGDT100100 Miniaturized Gate Drive Planar Transformers

www.vishay.com MGDT Series Vishay Custom Magnetics Miniaturized Gate Drive Planar Transformers ABSOLUTE MAXIMUM RATINGS PARAMETER CONDITIONS LIMITS UNITS Dielectric withstand voltage Drive to gate, 1 min Gate to gate, 1 min 3750 2500 VAC VAC Total power dissipation (1) TA = 25 °C 2.0 W Operating temperature (2) Continuous -55 to +125 °C Storage temperature Continuous -55 to +130 °C Frequency 100 to 500 kHz Size (L x W x H) 20.57 x 18.42 x 11.43 mm Terminals Thro.

MGDT100100 Features

* Deliver MOSFET / IGBT gate power and timing signals simultaneously Available

* Directly drive high side MOSFETs / IGBTs on busses up to 1200 V

* Excellent rise time, overshoot, and peak current characteristics

* 8 mm minimum creepage and clearance from drive to

MGDT100100 Datasheet (97.14 KB)