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SI1002R - N-channel MOSFET

SI1002R Description

www.vishay.com N-Channel 30 V (D-S) MOSFET Si1002R Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX.0.560 at VGS = 4.5 V 0.620 at VGS .

SI1002R Features

* TrenchFET® power MOSFET
* 100 % Rg tested
* Gate-source ESD protected: 1000 V

SI1002R Applications

* Load switch
* High speed switching
* DC/DC converters / boost converters
* For smart phones, tablet PCs and mobile computing G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gat

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N-channel MOSFET Vishay
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