* TrenchFET® Gen IV power MOSFET
* 100 % Rg tested
* The highest continuous drain current capability in its class
* Very low RDS-Qg FOM and Qgd elevate efficiency
* Increase power density of your design
* Material categorization: for definitions of com
SIA468DJ Datasheet (517.06 KB)
SIA468DJ
517.06 KB
Mosfet.
www.vishay.com SiA468DJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () (MAX.) 0.0084 at VGS = 10 V 0.0114 at.
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