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SIE878DF N-channel MOSFET

SIE878DF Description

New Product N-Channel 25-V (D-S) MOSFET SiE878DF Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0052 at VGS = 10 V 25 0.0068 at VGS = 4.5.

SIE878DF Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Gen III Power MOSFET
* Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
* Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of D

SIE878DF Applications

* VRM, POL
* DC/DC Conversion
* Server
* High-Side Switch G D D GS S 1 23 4 Top View D 5 5 Top surface is connected to pins 1, 5, 6, and 10 4 32 Bottom View 1 Ordering Information: SiE878DF-T1-GE3 (Lead (Pb)-free) and Halogen-free S N-Channel MOSFET For

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N-channel MOSFET Vishay
Vishay SIE878DF-like datasheet