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SIS778DN N-Channel MOSFET

SIS778DN Description

SiS778DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max.0.0050 at VGS = 10 V 0.0062 a.

SIS778DN Features

* Halogen-free According to IEC 61249-2-21 Definition
* SkyFET Monolithic TrenchFET® Power MOSFET and Schottky Diode
* 100 % Rg and UIS Tested
* Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile
* Compliant to RoHS Directive 2002

SIS778DN Applications

* Notebook PC - System and Memory - Low Side D Bottom View Ordering Information: SiS778DN-T1-GE3 (Lead (Pb)-free and Halogen-free) G N-Channel MOSFET S Schottky Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-

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N-Channel MOSFET Vishay
Vishay SIS778DN-like datasheet