SISA10DN N-Channel MOSFET

Vishay

Description

New Product N-Channel 30 V (D-S) MOSFET SiSA10DN Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) 0.0037 at VGS = 10 V 0.0050 at VGS.

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Datasheet Specifications

Part number: SISA10DN
Manufacturer: Vishay ↗
File Size: 518.65 KB
Datasheet: SISA10DN-Vishay.pdf
Description: N-Channel MOSFET

Features

* TrenchFET® Gen IV Power MOSFET
* 100 % Rg and UIS Tested

Applications

* High Power Density DC/DC
* Synchronous Rectification
* VRMs and Embedded DC/DC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Curr

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SISA10DN N-Channel MOSFET Vishay

Vishay SISA10DN-like datasheet