* TrenchFET® power MOSFET
* Ultra small 0.8 mm x 0.6 mm outline
* Ultra thin 0.4 mm max. height
* Typical ESD protection 1500 V (HBM)
* 1.2 V rated RDS(ON)
* 100% Rg tested
* Material categorization: for definitions of compliance please see www
SIUD412ED Datasheet (180.53 KB)
SIUD412ED
180.53 KB
N-channel mosfet.
www.vishay.com SiUD412ED Vishay Siliconix N-Channel 12 V (D-S) MOSFET PowerPAK® 0806 Single D 3 0.4 mm 0.8 mm 1 0.6 mm Top View PRODUCT SUMMAR.
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