SIUD412ED - N-Channel MOSFET
SIUD412ED Features
* TrenchFET® power MOSFET
* Ultra small 0.8 mm x 0.6 mm outline
* Ultra thin 0.4 mm max. height
* Typical ESD protection 1500 V (HBM)
* 1.2 V rated RDS(ON)
* 100% Rg tested
* Material categorization: for definitions of compliance please see www
