Click to expand full text
SUD50N06-12
New Product
Vishay Siliconix
www.DataSheet4U.com
N-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
60
FEATURES
ID (A)c
63
rDS(on) (W)
0.012 @ VGS = 10 V
D TrenchFETr Power MOSFET D 175 _C Junction Temperature
APPLICATIONS
D Automotive and Industrial
D
TO-252
Drain Connected to Tab G D S
G
Top View Ordering Information: SUD50N06-12 S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current, Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.