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Si7858BDP N-Channel MOSFET

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Description

New Product Si7858BDP Vishay Siliconix N-Channel 12 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) 0.0025 at VGS = 4.5 V 0.0030 at VGS = 2.5 .

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Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested
* 100 % UIS Tested

Applications

* 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm
* Low Output Rectifiers Voltage, High Current D Synchronous G Bottom View Ordering Information: Si7858BDP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Paramete

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Vishay Si7858BDP-like datasheet