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Si7888DP N-channel MOSFET

Si7888DP Description

Si7888DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.012 at VGS = 10 V 0.020 at VGS = 4.5 V ID (A) 15.7 12.

Si7888DP Features

* Halogen-free available
* TrenchFET® Power MOSFET
* New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile
* Optimized for “High-Side” Synchronous Operation

Si7888DP Applications

* DC/DC Converters 5.15 mm 6.15 mm S 1 2 3 S S G 4 D D 8 7 6 5 D D D G Bottom View Ordering Information: Si7888DP-T1-E3 (Lead (Pb)-free) Si7888DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-S

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N-channel MOSFET Vishay
Vishay Si7888DP-like datasheet