Datasheet4U Logo Datasheet4U.com

Si8406DB - N-Channel MOSFET

Si8406DB Description

www.vishay.com Si8406DB Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () MAX.0.033 at VGS = 4.5 V 20 0.037 at.

Si8406DB Features

* TrenchFET® power MOSFET
* Ultra-small 1.5 mm x 1 mm maximum outline
* Ultra-thin 0.59 mm maximum height

Si8406DB Applications

* Load switch D
* Battery management
* Boost converter Available G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Curren

📥 Download Datasheet

Preview of Si8406DB PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • SI8401DB - P-Channel MOSFET (Vishay Siliconix)
  • SI8402DB - N-Channel MOSFET (Vishay Siliconix)
  • SI8405DB - P-Channel MOSFET (Vishay Siliconix)
  • SI84 - SMT Power Inductor (Delta Electronics)
  • Si8410 - Single and Dual-Channel Digital Isolator (Skyworks Solutions)
  • SI8410 - Single and Dual-Channel Digital Isolators (Silicon Laboratories)
  • SI8411DB - P-Channel MOSFET (Vishay Siliconix)
  • SI8415DB - P-Channel MOSFET (Vishay Siliconix)

📌 All Tags

N-Channel MOSFET Vishay
Vishay Si8406DB-like datasheet