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Si8407DB - P-Channel MOSFET

Si8407DB Description

P-Channel 20 V (D-S) MOSFET Si8407DB Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.027 at VGS = - 4.5 V - 20 0.032 at VGS = - 2.5 V 0..

Si8407DB Features

* Halogen-free according to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* MICRO FOOT® Chipscale Packaging Reduces Ultra-Low Footprint Area Profile (0.62 mm) and On-Resistance

Si8407DB Applications

* Portable Devices - PA Switch - Battery Switch - Load Switch S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS - 20 V VGS ±8 Continuous Drain Current (TJ = 150

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