* Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS)
* Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM):
SiHF8N50D Datasheet (172.56 KB)
SiHF8N50D
172.56 KB
Power mosfet.
www.vishay.com
SiHF8N50D
Vishay Siliconix
D Series Power MOSFET
D TO-220 FULLPAK
G
GDS
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. R.
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