* TrenchFET® Gen IV power MOSFET
* Very low Qg and Qoss reduce power loss and improve efficiency
* Flexible leads provide resilience to mechanical stress
* 100 % Rg and UIS tested
* Qgd/Qgs ratio < 1 optimizes switching characteristics
* Material categ
SiJ4108DP Datasheet (190.61 KB)
SiJ4108DP
190.61 KB
N-channel mosfet.
www.vishay.com
SiJ4108DP
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PowerPAK® SO-8L Single
6.15 mm
1
5.13 mm
Top View
PRODUCT SUMMARY
VDS (.
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