SiJ4108DP - N-Channel MOSFET

Vishay

Datasheet Details

TrenchFET® Gen IV power MOSFET.
Very low Qg and Qoss reduce power loss and improve efficiency.
Flexible leads provide resilience to mechanical stress.
100 % Rg and UIS tested.
Qgd/Qgs ratio < 1 optimizes switching characteristics.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Published: Dec 17, 2023 |