SiS612EDNT - N-Channel MOSFET
SiS612EDNT Features
* TrenchFET® power MOSFET
* 100 % Rg and UIS tested
* Low thermal resistance PowerPAK package with small size and 0.75 mm profile
* Typical ESD performance 3400 V
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPL
