SiS612EDNT Datasheet - Vishay

SiS612EDNT N-Channel MOSFET

SiS612EDNT Features

* TrenchFET® power MOSFET

* 100 % Rg and UIS tested

* Low thermal resistance PowerPAK package with small size and 0.75 mm profile

* Typical ESD performance 3400 V

* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPL

Datasheet Details

SiS612EDNT

171.06 KB

N-channel mosfet.

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SiS612EDNT N-Channel MOSFET Vishay

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