SiZ260DT - Dual N-Channel MOSFET
SiZ260DT Features
* TrenchFET® Gen IV power MOSFETs
* 100 % Rg and UIS tested
* Integrated MOSFET half bridge power stage
* Optimized Qgs/Qgs ratio improves switching characteristics
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 A
