* TrenchFET® Gen IV power MOSFET
* High side and low side MOSFETs form optimized combination for 50 % duty cycle
* Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching
* 100 % Rg and UIS tested
* Material categorization: for de
SiZ342BDT Datasheet (180.40 KB)
SiZ342BDT
180.40 KB
Dual n-channel mosfet.
www.vishay.com
SiZ342BDT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PowerPAIR® 3 x 3 G2 S2 8
S2 7 S2 6
5
S1/D2
(Pin 9)
3 mm
1
3 mm
To.
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