* TrenchFET® Gen IV power MOSFET
* SkyFET® low side MOSFET with integrated Schottky
* 100 % Rg and UIS tested
* Internally connected half-bridge configuration in 3.3 mm-by-3.3 mm footprint
* Material categorization: for definitions of compliance please see www
SiZF300DT Datasheet (234.58 KB)
SiZF300DT
234.58 KB
Dual n-channel mosfet.
www.vishay.com SiZF300DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode PowerPAIR® 3 x 3F D1 S2 3.3 mm 1 3.3 mm Top View.
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