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V10PL45 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

V10PL45 Description

V10PL45 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.28 V a.

V10PL45 Features

* TMBS® K eSMP® Series
* Very low profile - typical height of 1.1 mm
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2

V10PL45 Applications

* For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 10 A 45 V 200 A 0.35 V 150 °C MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base

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Datasheet Details

Part number
V10PL45
Manufacturer
Vishay ↗
File Size
666.76 KB
Datasheet
V10PL45_Vishay.pdf
Description
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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