* Very low profile - typical height of 1.1 mm Available
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak
V10PM12-M3 Datasheet (92.96 KB)
V10PM12-M3
92.96 KB
High current density surface mount trench mos barrier schottky rectifier.
www.vishay.com V10PM12-M3, V10PM12HM3 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Lo.
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