V10PWL45C - Trench MOS Barrier Schottky Rectifier
V10PWL45C Features
* Very low profile - typical height of 1.3 mm Available
* Trench MOS Schottky technology
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak
