V1PM10 Datasheet - Vishay

V1PM10, Surface Mount Trench MOS Barrier Schottky Rectifier

www.vishay.com V1PM10 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier eSMP® Series Top View Bottom View MicroSM

Features

* Very low profile - typical height of 0.65 mm
* Ideal for automated placement Available
* Trench MOS Schottky technology
* Low forward voltage drop
* Low power loss, high efficiency
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

Applications

* For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications, in commercial, industrial, and automotive applications. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM IFSM 100 V 25 A VF at IF = 1.0 A (125 °C) 0.58 V TJ max. 175 °C Package

V1PM10-Vishay.pdf