V1PM10 Datasheet - Vishay

V1PM10 Surface Mount Trench MOS Barrier Schottky Rectifier

V1PM10 Features

* Very low profile - typical height of 0.65 mm

* Ideal for automated placement Available

* Trench MOS Schottky technology

* Low forward voltage drop

* Low power loss, high efficiency

* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

Datasheet Details

V1PM10

96.72 KB

Surface mount trench mos barrier schottky rectifier.

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