* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
V20150SG Datasheet (136.34 KB)
V20150SG
136.34 KB
High-voltage trench mos barrier schottky rectifier.
www.vishay.com V20150SG, VI20150SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A.
📁 Related Datasheet
V20150S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20150S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20150SG-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20150C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20150C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20100S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V20100SG High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
