* Very low profile - typical height of 0.65 mm Available
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop
* Low power loss, high efficiency
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
V2PM12
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Surface mount trench mos barrier schottky rectifier.
www.vishay.com V2PM12 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Series Top View Bottom View M.
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