V3P6 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V3P6 Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series SMP (DO-220AA) Cathode .

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Datasheet Specifications

Part number: V3P6
Manufacturer: Vishay ↗
File Size: 101.15 KB
Datasheet: V3P6-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Low profile package Available
* Ideal for automated placement
* Trench MOS Schottky technology
* Low power losses, high efficiency
* Low forward voltage drop
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* AEC-Q101 qua

Applications

* For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) VRRM 3.0 A 60 V IFSM 60 A VF at IF = 3.0 A 0.48 V TJ max. Package 150 °C SMP (DO-220AA) Circuit configuration Single MECHANICAL DATA Case

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