V40PW45C Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V40PW45C Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF =.

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Datasheet Specifications

Part number: V40PW45C
Manufacturer: Vishay ↗
File Size: 128.47 KB
Datasheet: V40PW45C-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.3 mm Available
* Trench MOS Schottky technology
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 40 A 45 V 240 A VF at IF = 20 A (TA = 125 °C) 0.49 V TJ max. Package 150 °C SlimDPAK (TO-252AE) Circuit configuration Common cathode M

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V40PW45C Trench MOS Barrier Schottky Rectifier Vishay

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