V7N3M153 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V7N3M153 Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier K 1 2 3 4 Anode (1) Anode (2) Ano.

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Datasheet Specifications

Part number: V7N3M153
Manufacturer: Vishay ↗
File Size: 158.58 KB
Datasheet: V7N3M153-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Low profile package - typical height of 0.88 mm Available
* Leadless DFN package with side-wettable flanks suitable for customer AOI (Automatic Optical Inspection)
* Very low voltage drop by TMBS Gen3 technology
* Low power losses, high efficiency
* Meets MS

Applications

* For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: DFN33A Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-

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