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V8P45 Datasheet - Vishay

V8P45 Trench MOS Barrier Schottky Rectifier

V8P45 Features

* Very low profile - typical height of 1.1 mm Available

* Ideal for automated placement

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak

Datasheet Details

V8P45

99.21 KB

Trench mos barrier schottky rectifier.

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V8P45 Trench MOS Barrier Schottky Rectifier Vishay

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