Datasheet4U Logo Datasheet4U.com

VIT2060G-E3 Datasheet - Vishay

VIT2060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

VIT2060G-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

VIT2060G-E3 Datasheet (143.16 KB)

Preview of VIT2060G-E3 PDF
VIT2060G-E3 Datasheet Preview Page 2 VIT2060G-E3 Datasheet Preview Page 3

Datasheet Details

Part number:

VIT2060G-E3

Manufacturer:

Vishay ↗

File Size:

143.16 KB

Description:

Dual high voltage trench mos barrier schottky rectifier.

📁 Related Datasheet

VIT2060G Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VIT2060G Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VIT2060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VIT2060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VIT2045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VIT2045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VIT2045CHM3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VIT2080C Dual Trench MOS Barrier Schottky Rectifier (Vishay)

TAGS

VIT2060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

VIT2060G-E3 Distributor