* 175 °C high performance Schottky diode
* Very low forward voltage drop
* Extremely low reverse leakage
* Optimized VF vs. IR trade off for high efficiency
* Increased ruggedness for reverse avalanche capability
* RBSOA available
* Negligible
VS-10WT10FN Datasheet (127.89 KB)
VS-10WT10FN
127.89 KB
High performance generation 5.0 schottky rectifier.
www.vishay.com
VS-10UT10, VS-10WT10FN
Vishay Semiconductors
High Performance Generation 5.0 Schottky Rectifier, 10 A
I-PAK (TO-251AA)
Base cathode
.
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