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VS-6CUT10-E High Performance Schottky

VS-6CUT10-E Description

VS-6CUT10-E, VS-6CWT10FN-E Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 3 A I-PAK (TO-251AA) Base common cathode 4 D-PAK (TO-.

VS-6CUT10-E Features

* 175 °C high performance Schottky diode
* Very low forward voltage drop
* Extremely low reverse leakage
* Optimized VF vs. IR trade off for high efficiency
* Increased ruggedness for reverse avalanche capability
* RBSOA available
* Negligible

VS-6CUT10-E Applications

* Specific for PV cells bypass diode
* High efficiency SMPS
* High frequency switching
* Output rectification
* Reverse battery protection
* Freewheeling
* DC/DC systems
* Increased power density systems MAJOR RATINGS AND CHARACTERISTI

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