* 175 °C high performance Schottky diode
* Very low forward voltage drop
* Extremely low reverse leakage
* Optimized VF vs. IR trade off for high efficiency
* Increased ruggedness for reverse avalanche capability
* RBSOA available
* Negligible
VS-6CWT10FN-E Datasheet (149.52 KB)
VS-6CWT10FN-E
149.52 KB
High performance schottky.
VS-6CUT10-E, VS-6CWT10FN-E Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 3 A I-PAK (TO-251AA) Base common cathode 4 D-PAK (TO-.
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