* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
VT2080C-E3 Datasheet (157.46 KB)
VT2080C-E3
157.46 KB
Dual trench mos barrier schottky rectifier.
VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low .
📁 Related Datasheet
VT2080C Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VT2080S Trench MOS Barrier Schottky Rectifier (Vishay)
VT2080S-E3 Trench MOS Barrier Schottky Rectifier (Vishay)
VT200 Photoconductive Cells and Analog Optoisolators (PerkinElmer Optoelectronics)
VT2021 High Definition Audio Codec (VIA)
VT2045BP Trench MOS Barrier Schottky Rectifier (Vishay)
VT2045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT2045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT2045CBP Trench MOS Barrier Schottky Rectifier (Vishay)
VT2045CHM3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
