WMJ028N10HGS Datasheet, Mosfet, WAYON

WMJ028N10HGS Features

• Mosfet
• VDS= 100V, ID = 228A RDS(on) < 3mΩ @ VGS = 10V
• High Speed Power Switching
• Low Gate Charge
• Low RDS(ON)
• 100% EAS Guaranteed Applications

PDF File Details

Part number:

WMJ028N10HGS

Manufacturer:

WAYON

File Size:

593.96kb

Download:

📄 Datasheet

Description:

100v n-channel enhancement mode power mosfet. WMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resista

WMJ028N10HGS Application

• Applications Features
• VDS= 100V, ID = 228A RDS(on) < 3mΩ @ VGS = 10V
• High Speed Power Switching
• Low Gate Charge

TAGS

WMJ028N10HGS

WAYON

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