2SB1197 Datasheet, Transistor, WEITRON

2SB1197 Features

• Transistor
• High current capacity in compact package.
• Epitaxial planar type.
• We declare that the material of product compliance with RoHS requirements. 1 2 3 SOT-2

PDF File Details

Part number:

2SB1197

Manufacturer:

WEITRON

File Size:

75.66kb

Download:

📄 Datasheet

Description:

Pnp transistor.

TAGS

2SB1197

WEITRON

📁 Related Datasheet

2SB1190 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB1190 DESCRIPTION ·With TO-220 package ·High VCEO.

2SB1190 - PNP Transistor (INCHANGE)
isc Silicon PNP Power Transistor DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Complement t.

2SB1192 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB1192 DESCRIPTION ·With TO-220Fa package ·High VC.

2SB1192 - PNP Transistor (INCHANGE)
isc Silicon PNP Power Transistor 2SB1192 DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Com.

2SB1193 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB1193 DESCRIPTION ·With TO-220Fa package ·High DC.

2SB1193 - Silicon PNP Transistor (Panasonic)
Power Transistors 2SB1193 Silicon PNP epitaxial planar type darlington Unit: mm • High forward current transfer ratio hFE • High-speed switching • F.

2SB1193 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·High DC Current Gain- : hFE= .

2SB1194 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB1194 DESCRIPTION ·With TO-220Fa package ·High DC.

2SB1194 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor 2SB1194 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·High DC Current Gain.

2SB1197 - Silicon Epitaxial Planar Transistor (GME)
Production specification Silicon Epitaxial Planar Transistor FEATURES z Small surface mounting type. z Corredtor peak current(Max.=1000mA). Pb Lead.