DTD123Y - Bias Resistor Transistor NPN Silicon
Bias Resistor Transistor NPN Silicon P b Lead(Pb)-Free R1 1 BASE R 2 COLLECTOR 3 2 EMITTER DTD123Y 3 1 2 SOT-23 Absolute maximum ratings (TA = 25ºC) Parameter Symbol Limits Unit Supply voltage Vcc 50 V Input voltage VIN -5~+12 V Output current IC 500 mA Power dissipation Pd 200 mW Junction temperature Tj 150 Storage temperature Tstg -55~+150 Electrical characteristics (TA = 25ºC) Parameter Symbol Min Typ Max Unit Conditions Input voltage Output voltage Input c
