BAS216 Datasheet (WEJ)

BAS216, DIODE

RoHS BAS216 TC1SS355 200mW SOD-323 SURFACE MOUNTSmall Outline Flat Lead Plastic Package DHigh Speed Switching Diode TAbsolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Value Units .,LPD Power Dissipation 200 mW TSTG Storage Temperature Range -65 to +150 °C TJ Operating Junction Temperature +150 °C VR Reverse Voltage 80 V OVRM Repetitive Peak Reverse Voltage 90 V IFM Forward Current 250 mA CIO Continuous Forward Current 150 mA IFRM Repetitive Peak

BAS216 Features

* High Speed Switching Device (TRR